Title :
Intrinsically switchable, BST-on-silicon composite FBARs
Author :
Sis, Seyit Ahmet ; Lee, V.C. ; Mortazawi, Amir
Author_Institution :
University of Michigan, Ann Arbor, United States
Abstract :
Summary form only given, as follows. This paper presents a DC voltage dependent switchable, composite thin film bulk acoustic wave (FBAR) resonator at 1.82 GHz. The resonator consists of barium stronium titanate-on-silicon in which barium stronium titanate (BST) is primarily used for transduction. The electrostrictive property of BST is exploited to turn the resonator on and off by applying a DC voltage. The device exhibits a quality factor of 157 and 301 at its series and parallel resonance frequencies, respectively.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973355
