• DocumentCode
    2595181
  • Title

    Variation-Aware TED-Based Approach for Nano-CMOS RTL Leakage Optimization

  • Author

    Banerjee, S. ; Mathew, J. ; Pradhan, D.K. ; Mohanty, S.P. ; Ciesielski, M.

  • Author_Institution
    Univ. of Bristol, Bristol, UK
  • fYear
    2011
  • fDate
    2-7 Jan. 2011
  • Firstpage
    304
  • Lastpage
    309
  • Abstract
    As technology scales down to nanometer regime the process variations have profound effect on circuit characteristics. Meeting timing and power constraints under such process variations in nano-CMOS circuit design is increasingly difficult. This causes a shifting from worst-case based analysis and optimization to statistical or probability based analysis and optimization at every level of circuit abstraction. This paper presents a TED (Taylor Expansion Diagram) based -multi-Tox techniques during high-level synthesis (HLS). A variation-aware simultaneous scheduling and resource binding algorithm is proposed which maximizes the power yield under timing yield and performance constraint. For this purpose, a-multi-Tox library is characterized under process variation. The delay and power distribution of different functional units are exhaustively studied. The proposed variation-aware algorithm uses those components for generating low power RTL under a given timing yield and performance constraint. The experimental results show significant improvement as high as 95% on leakage power yield under given constraints.
  • Keywords
    CMOS integrated circuits; high level synthesis; statistical analysis; Taylor expansion diagram; high-level synthesis; nano-CMOS RTL leakage optimization; nano-CMOS circuit design; probability analysis; resource binding algorithm; statistical analysis; variation-aware TED-based approach; variation-aware simultaneous scheduling; Adders; Delay; Libraries; Logic gates; Optimization; Scheduling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design (VLSI Design), 2011 24th International Conference on
  • Conference_Location
    Chennai
  • ISSN
    1063-9667
  • Print_ISBN
    978-1-61284-327-8
  • Electronic_ISBN
    1063-9667
  • Type

    conf

  • DOI
    10.1109/VLSID.2011.40
  • Filename
    5718819