Title :
Wideband Low-Noise-Amplifier (LNA) with Lg = 50 nm InGaAs pHEMT and wideband RF chokes
Author :
Chen, Patrick S. ; Kim, Dongkyu ; Bergman, J.I. ; Hacker, J.B. ; Brar, B.
Author_Institution :
Teledyne Scientific and Imaging, Thousand Oaks, United States
Abstract :
Summary form only given, as follows. This paper presents a 2-stage Low-Noise-Amplifier (LNA) MMIC which provides ultra-low-noise, broad bandwidth, and high associated gain while consuming a fairly low DC power dissipation of 20 mW. The amplifier has been fabricated using Lg = 50 nm enhancement-mode (E-mode) In0.7Ga0.3As pHEMTs on a 4-mil InP substrate. By using broad bandwidth RF chokes, the LNA exhibits an average noise figure (NF) of 1.1 dB from 4 to 24 GHz with a minimum associated gain (Ga) of 17 dB.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973363
