Title :
Effect of cobalt silicide to the sentivity of p-n junction temperature sensor
Author :
Poyai, A. ; Ratanaudomphisut, E. ; Supadech, J. ; Klunngien, N. ; Hruanan, C. ; Sopitpan, S.
Author_Institution :
Thai Microelectron. Center (TMEC), Nat. Sci. & Technol. Dev. Agency, Chachoengsao
Abstract :
This paper describes the impact of thickness of cobalt silicide to the sentivity of p-n junction temperature sensor. The starting cobalt thickness of 12, 20 and 30 nm and non-silicided reference wafer have been used. The maximum sentivity for starting cobalt thickness of 12 nm has been obtained from both large area and long perimeter p-n junction. This corresponds to the low leakage current and series resistance.
Keywords :
cobalt compounds; p-n junctions; sensitivity analysis; temperature sensors; low leakage current; p-n junction; series resistance; temperature sensor; thickness effects; CMOS process; CMOS technology; Capacitance-voltage characteristics; Charge carrier processes; Cobalt; Diodes; Leakage current; P-n junctions; Silicides; Temperature sensors;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2008. ECTI-CON 2008. 5th International Conference on
Conference_Location :
Krabi
Print_ISBN :
978-1-4244-2101-5
Electronic_ISBN :
978-1-4244-2102-2
DOI :
10.1109/ECTICON.2008.4600547
