Title :
Study on temperature effect on p-n and zener junction for PTAT temperature sensor
Author :
Songmalai, P. ; Phetchakul, T. ; Pengchan, W. ; Ratanaudomphisut, E. ; Supadech, J.
Author_Institution :
Electron. Dept. Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok
Abstract :
Research on a new compact BJT PTAT temperature sensor structure has been reported. The zener junction-connected BJT transistor and Base-Emitter voltage of transistor can be temperature dependent. The performance of new compact PTAT circuit can be improved by using difference in thermal characteristics between p-n and zener junction. DeltaV/DeltaT can be further increased by connecting p-n and zener junction in series. The results show that DeltaV/DeltaT of the circuit increased by 6.77 timed or 85% compared with conventional PTAT and connecting two p-n and zener junction in series. The result show that DeltaV/DeltaT of the circuit increased by 3.3 timed or 70%compared with proposed circuit the output voltage is large enough so that it can be used directly without additional amplifier. This also improves S/N ratio and the unique linearity of PTAT is still preserved. The working temperature of circuit is between - 60degC to 160degC.
Keywords :
Zener effect; bipolar transistors; p-n junctions; temperature sensors; BJT transistor; PTAT circuit; Zener junction; base-emitter voltage; p-n junction; temperature effect; P-n junctions; Temperature sensors;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2008. ECTI-CON 2008. 5th International Conference on
Conference_Location :
Krabi
Print_ISBN :
978-1-4244-2101-5
Electronic_ISBN :
978-1-4244-2102-2
DOI :
10.1109/ECTICON.2008.4600548
