Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems

Summary form only given, as follows. A high efficiency switch-mode amplifier with a dual-gate configuration in the output stage is designed in a 250 nm GaN HEMT technology. Measurements are performed up to 8 Gbps using periodic square wave signals and bandpass delta sigma (BPDS) signals. The results are compared to a single-gate amplifier which uses the same driver stage and gate width. The dual-gate amplifier achieves a higher output power and shows a better RF-performance at bit rates above 2 Gbps.