Comparison of conventional and LDD NMOSFETs hot-carrier degradation in 0.8 μm CMOS technology

Author

Phongphanchantra, N. ; Ruangphanit, A. ; Klunngien, N. ; Yamwong, W. ; Niemcharoen, S.

Author_Institution

Thai Microelectron. Center (TMEC), Nat. Sci. & Technol. Dev. Agency (NSTDA), Chachoengsao

Volume

2

fYear

2008

fDate

14-17 May 2008

Firstpage

825

Lastpage

828

Abstract

Hot-carrier degradation phenomena in n-channel MOSFETs (NMOSFETs) through the comparison between conventional and lightly doped drain (LDD) structure of 0.8-mum CMOS technology was described. This phenomenon was also observed in the conventional NMOSFETs. This is because of hot-electron trap in the gate accumulating carriers (holes) along the channel region near the drain. That is, these holes effectively increased the effective channel length. On the other hand, the lifetimes of conventional and LDD NMOSFETs defined as how long it takes the transconductance deviation to reach 10 %, which the LDD NMOSFETs are longer than conventional NMOSFETs under the same hot-carrier condition.

Keywords

CMOS integrated circuits; MOSFET; electric admittance; electron traps; hot carriers; CMOS technology; gate accumulating carriers; hot-carrier degradation phenomena; hot-electron trap; lightly doped drain structure; n-channel MOSFET; size 0.8 mum; transconductance; CMOS technology; Degradation; Fabrication; Hot carriers; MOS devices; MOSFETs; Microelectronics; Substrates; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2008. ECTI-CON 2008. 5th International Conference on

Conference_Location

Krabi

Print_ISBN

978-1-4244-2101-5

Electronic_ISBN

978-1-4244-2102-2

Type

conf

DOI

10.1109/ECTICON.2008.4600557

Filename

4600557