The innovative AlN-ISFET based pH sensor

Author

Bunjongpru, W. ; Porntheeraphat, S. ; Trithaveesak, O. ; Somwang, N. ; Khomdet, P. ; Jeamsaksiri, W. ; Hruanun, C. ; Poyai, A. ; Nukeaw, J.

Author_Institution

Thai Microelectron. Center (TMEC), Chachoengsao

Volume

2

fYear

2008

fDate

14-17 May 2008

Firstpage

833

Lastpage

836

Abstract

This innovative pH-ISFET sensor used nanocrystalline-AlN thin film as ion-sensitive membrane which prepared by reactive gas-timing r.f. magnetron sputtering without heating substrate and post annealing. The technique of gas-timing r.f. magnetron sputtering purposed by us, the feeding gas is on-off controlled periodically in such a way that the deposited AlO_xN_y film has a quite stable composition of aluminum, nitrogen and oxygen (Al:O:N=52:18:30%) all over the entire film. The AlN-ISFET devices were structured. The pH-sensitivity characteristics show increasing sensitivity depended on film thickness. The highest sensitivity is 54.50 mV/pH achieved from 80 nm of AlN thin film which is comparable to our previous report Si₃N₄-ISFET devices.

Keywords

aluminium compounds; chemical sensors; ion sensitive field effect transistors; oxygen compounds; pH measurement; silicon compounds; sputtering; AlON; ISFET based pH sensor; SiN; ion-sensitive membrane; nanocrystalline thin film; post annealing; reactive gas-timing; rf magnetron sputtering; Aluminum; Annealing; Biomembranes; Heating; Magnetic sensors; Nitrogen; Sputtering; Substrates; Thermal sensors; Thin film sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2008. ECTI-CON 2008. 5th International Conference on

Conference_Location

Krabi

Print_ISBN

978-1-4244-2101-5

Electronic_ISBN

978-1-4244-2102-2

Type

conf

DOI

10.1109/ECTICON.2008.4600559

Filename

4600559