Fabrication and modeling of organic thin-film transistor on glass substrate

Author

Tippo, T. ; Thanachayanont, C. ; Sahasithiwat, S. ; Thanachayanont, A.

Author_Institution

Fac. of Eng. & Res. Center for Commun. & Inf. Technol., King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok

Volume

2

fYear

2008

fDate

14-17 May 2008

Firstpage

861

Lastpage

864

Abstract

Organic thin film transistors have been fabricated using pentacene as an active material. Aluminium gate electrodes, pentacene active layers and gold source-drain contacts were fabricated on glass substrate using thermal evaporation though metallic mask. Gate dielectric layers were processed by solution-process spin-coating. The fabricated transistor exhibited the maximum carrier mobility of 0.01 cm²/V-s and the on/off current current ratio over 400.

Keywords

aluminium; dielectric materials; gold; spin coating; substrates; thin film transistors; Al; Au; active material; gate dielectric layers; gate electrodes; glass substrate; metallic mask; organic thin film transistors; pentacene active layers; solution-process spin-coating; source-drain contacts; thermal evaporation; Aluminum; Dielectric materials; Dielectric substrates; Electrodes; Fabrication; Glass; Organic materials; Organic thin film transistors; Pentacene; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2008. ECTI-CON 2008. 5th International Conference on

Conference_Location

Krabi

Print_ISBN

978-1-4244-2101-5

Electronic_ISBN

978-1-4244-2102-2

Type

conf

DOI

10.1109/ECTICON.2008.4600566

Filename

4600566