Integrated active miniature sensors for electro-magnetic near field measurement

Author

Thiede, A. ; Uddin, Nasir ; Awny, Ahmed Sanaa

Author_Institution

Univ. Paderborn, Paderborn, Germany

fYear

2012

fDate

21-24 May 2012

Firstpage

197

Lastpage

200

Abstract

Integrated electric dipole and magnetic loop probes together with active electronics in AlGaAs/GaAs-HEMT and SiGe:C-HBT technologies are presented. While the probes allow for a spatial resolution in the 100 μm range, integrated amplifiers provide about 30 dB gain over a bandwidth of about 10 GHz. Switchable double probe sensors enable the measurement of two field components at each position.

Keywords

Ge-Si alloys; III-V semiconductors; aluminium compounds; carbon; electric sensing devices; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; magnetic field measurement; magnetic moments; magnetic sensors; AlGaAs-GaAs; HBT; HEMT; SiGe:C; electromagnetic near field measurement; integrated active miniature sensor; integrated amplifier; integrated electric dipole; magnetic loop probe; spatial resolution; switchable double probe sensor; Area measurement; Electromagnetic compatibility; Fingerprint recognition; Frequency measurement; Metals; Resistors; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (APEMC), 2012 Asia-Pacific Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4577-1557-0

Electronic_ISBN

978-1-4577-1558-7

Type

conf

DOI

10.1109/APEMC.2012.6237986

Filename

6237986