DocumentCode :
2596130
Title :
A new current sensor based on the Miller effect highly immune to EMI
Author :
Aiello, Orazio ; Fiori, Franco
Author_Institution :
Eln. Dept., Politec. di Torino, Torino, Italy
fYear :
2012
fDate :
21-24 May 2012
Firstpage :
69
Lastpage :
72
Abstract :
This paper deals with the susceptibility to electromagnetic interference (EMI) of circuits used in smart power integrated circuits to sense the current of power transistors. The susceptibility of a conventional current sensor based on the mirroring principle is first investigated. Then a new circuit that avoids the electrical connection of the current sensor to the power transistor drain terminal is proposed. The susceptibility of the above mentioned current sensors is discussed and evaluated by means of time-domain computer simulations.
Keywords :
electric sensing devices; electromagnetic devices; electromagnetic interference; power integrated circuits; power transistors; EMI; Miller effect; current sensor; electrical connection avoidance; electromagnetic interference; mirroring principle; power transistor drain terminal; smart power integrated circuits; time-domain computer simulations; MOSFET circuits; Magnetic susceptibility; Switches; Time frequency analysis; Transistors; Wireless communication; Wireless sensor networks;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility (APEMC), 2012 Asia-Pacific Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1557-0
Electronic_ISBN :
978-1-4577-1558-7
Type :
conf
DOI :
10.1109/APEMC.2012.6238001
Filename :
6238001
Link To Document :
بازگشت