DocumentCode
2596162
Title
Novel method To identify electrical mechanisms responsible for functional failures during Direct Power Injection “DPI”
Author
Abouda, Kamel ; Besse, Patrice ; Laplagne, Thierry
Author_Institution
Freescale Semicond., Toulouse, France
fYear
2012
fDate
21-24 May 2012
Firstpage
81
Lastpage
84
Abstract
In particular applications, integrated circuits (ICs) have to be designed to guarantee safe operations during severe electromagnetic aggressions stresses such as Direct Power Injection (DPI). Unfortunately, the simulation of functional failures during DPI events remains very challenging for analogue products due the large frequency domain and to the lack of models for internal parasitic coupling. This paper describes a test method to identify the design functions and the physical mechanisms that lead to functional failures when integrated circuits are submitted to EMC stress.
Keywords
electromagnetic compatibility; failure analysis; integrated circuit design; integrated circuit testing; DPI event; EMC stress; IC; analogue products; design function; direct power injection; electrical mechanisms; electromagnetic aggressions stress; frequency domain; functional failures; integrated circuits; internal parasitic coupling; physical mechanism; Electrostatic discharges; Integrated circuits; Junctions; Pulse width modulation; Stress; Stress measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility (APEMC), 2012 Asia-Pacific Symposium on
Conference_Location
Singapore
Print_ISBN
978-1-4577-1557-0
Electronic_ISBN
978-1-4577-1558-7
Type
conf
DOI
10.1109/APEMC.2012.6238003
Filename
6238003
Link To Document