• DocumentCode
    2596162
  • Title

    Novel method To identify electrical mechanisms responsible for functional failures during Direct Power Injection “DPI”

  • Author

    Abouda, Kamel ; Besse, Patrice ; Laplagne, Thierry

  • Author_Institution
    Freescale Semicond., Toulouse, France
  • fYear
    2012
  • fDate
    21-24 May 2012
  • Firstpage
    81
  • Lastpage
    84
  • Abstract
    In particular applications, integrated circuits (ICs) have to be designed to guarantee safe operations during severe electromagnetic aggressions stresses such as Direct Power Injection (DPI). Unfortunately, the simulation of functional failures during DPI events remains very challenging for analogue products due the large frequency domain and to the lack of models for internal parasitic coupling. This paper describes a test method to identify the design functions and the physical mechanisms that lead to functional failures when integrated circuits are submitted to EMC stress.
  • Keywords
    electromagnetic compatibility; failure analysis; integrated circuit design; integrated circuit testing; DPI event; EMC stress; IC; analogue products; design function; direct power injection; electrical mechanisms; electromagnetic aggressions stress; frequency domain; functional failures; integrated circuits; internal parasitic coupling; physical mechanism; Electrostatic discharges; Integrated circuits; Junctions; Pulse width modulation; Stress; Stress measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility (APEMC), 2012 Asia-Pacific Symposium on
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4577-1557-0
  • Electronic_ISBN
    978-1-4577-1558-7
  • Type

    conf

  • DOI
    10.1109/APEMC.2012.6238003
  • Filename
    6238003