DocumentCode :
2596371
Title :
Characterization Of Ion Beam Damaged Photovoltaic Devices
Author :
Vaseashta, A. ; Epp, J.M. ; Sen, S. ; Burton, L.C.
Author_Institution :
Virginia Polytechnic Institute and State University
Volume :
6
fYear :
1990
fDate :
12-17 Aug 1990
Firstpage :
363
Lastpage :
368
Keywords :
Argon; Etching; Gallium arsenide; Ion beams; Photoconductivity; Photovoltaic cells; Photovoltaic systems; Rapid thermal annealing; Schottky diodes; Solar power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Engineering Conference, 1990. IECEC-90. Proceedings of the 25th Intersociety
Print_ISBN :
0-8169-0490-1
Type :
conf
DOI :
10.1109/IECEC.1990.748078
Filename :
748078
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2596371
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