Title :
Two stage dual Gate MESFET Monolithic Gain Control Amplifier for Ka-Band
Author :
Sokolov, V. ; Geddes, J. ; Contolatis, A.
Abstract :
A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.
Keywords :
Antenna arrays; Equivalent circuits; FETs; Feeds; Frequency; Gain control; Integrated circuit noise; MESFETs; Phased arrays; Scattering parameters;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1987.1114519
