Title :
A 2-20 GHz, High-Gain, Monolithic HEMT Distributed Amplifier
Author :
Nishimoto, C. ; LaRue, R. ; Bandy, S. ; Day, M. ; Eckstein, J. ; Webb, C. ; Yuen, C. ; Zdasiuk, G.
Abstract :
A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0.3-micron gate-length HEMT devices has achieved 11-dB +- 0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved mid-band (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.
Keywords :
Distributed amplifiers; Equivalent circuits; Etching; Fabrication; Gain measurement; Gallium arsenide; HEMTs; Noise measurement; Semiconductor process modeling; Transconductance;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1987.1114527
