Title :
Analysis Of Sidewall Lateral Parasitic Leakage In A 16-mb Dram Cell
Author :
Geissler, Stephen F. ; Mandelman, Jack A.
Author_Institution :
IBM General Technology Division
Keywords :
FETs; Failure analysis; Finite element methods; Geometry; Lifting equipment; Numerical analysis; Predictive models; Random access memory; Very large scale integration; Voltage;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
DOI :
10.1109/NUPAD.1990.748258
