Title :
Low temperature Cu/Cu direct bonding using formic gas in-situ treatment
Author :
Yang, Wenhua ; Akaike, Masatake ; Suga, Tadatomo
Author_Institution :
Sch. of Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
A low temperature Cu/Cu direct bonding technology using formic acid vapor treatment was developed. Using this technology, 6mm×6mm Cu film chips were bonded at low temperature in N2 atmosphere. XPS surface analysis shows that Cu surface oxide was reduced after formic gas in-situ treatment. The bonding was conducted in N2 at 200°C after Cu surface was treated at 200°C for 10min.
Keywords :
X-ray photoelectron spectra; chemical mechanical polishing; copper; metallic thin films; organic compounds; surface treatment; wafer bonding; Cu-Cu; XPS surface analysis; copper film chip; copper surface oxide; formic acid vapor treatment; formic gas in-situ treatment; low temperature direct bonding technology; temperature 200 degC; time 10 min; Atmosphere; Bonding; Copper; Educational institutions; Films; Silicon; Surface treatment;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
DOI :
10.1109/LTB-3D.2012.6238051
