• DocumentCode
    2597012
  • Title

    The study on the micro-voids of InP/Si and InP/SiO2 wafer bonding by infrared transmission and scanning acoustic microscopy

  • Author

    Zhang, Xuan Xiong ; Ou, Yi ; Yang, Fan ; Ye, Tian Chun ; Zhuang, Song Lin

  • fYear
    2012
  • fDate
    22-23 May 2012
  • Firstpage
    85
  • Lastpage
    85
  • Abstract
    Low temperature wafer bonding for InP/Si and InP/SiO2 was studied. Scanning acoustic microscopy (SAM) has to be used for characterizing the bonding interface to determine if there are micro-voids (<;1 μm) at the interface although infrared imaging is available to InP/Si and InP/SiO2 bonding. The micro-voids also appear in the wafer bonding with oxide.
  • Keywords
    III-V semiconductors; acoustic microscopy; elemental semiconductors; indium compounds; silicon; silicon compounds; voids (solid); wafer bonding; InP-Si; InP-SiO2; bonding interface; infrared imaging; infrared scanning acoustic microscopy; infrared transmission acoustic microscopy; low temperature wafer bonding; microvoid; Acoustics; Annealing; Bonding; Indium phosphide; Microscopy; Silicon; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4673-0743-7
  • Type

    conf

  • DOI
    10.1109/LTB-3D.2012.6238054
  • Filename
    6238054
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597012