DocumentCode
2597079
Title
AlInAs selective oxidation for GaInAsP/Si hybrid semiconductor laser using surface activated bonding
Author
Hayashi, Yusuke ; Osabe, Ryo ; Fukuda, Keita ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2012
fDate
22-23 May 2012
Firstpage
93
Lastpage
93
Abstract
Toward a GaInAsP/Si hybrid laser with an AlInAs oxidation current confinement structure, AlInAs oxidation on a III-V/Si by Surface Activated Bonding was demonstrated.
Keywords
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; oxidation; quantum well lasers; silicon; wafer bonding; AlInAs; GaInAsP-Si; Si; hybrid semiconductor laser; oxidation current confinement structure; selective oxidation; surface activated bonding; Bonding; Indium phosphide; Lasers; Oxidation; Silicon; Silicon on insulator technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4673-0743-7
Type
conf
DOI
10.1109/LTB-3D.2012.6238058
Filename
6238058
Link To Document