Title :
A Comprehensive Model Of Inversion Layer Hole Mobility For Simulation Of Submicron Mosfets
Author :
Agostinelli, V.M. ; Shin, H. ; Tasch, A.F.
Author_Institution :
The University of Texas-Austin
Keywords :
Charge carrier processes; Doping; Equations; MOSFETs; Particle scattering; Phonons; Rough surfaces; Semiconductor process modeling; Surface roughness; Temperature distribution;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
DOI :
10.1109/NUPAD.1990.748266
