Title :
Simplified Simulation Of Gaas Mesfets With Semi-insulating Substrates Compensated By Deep Levels
Author :
Horio, K. ; Fuseya, Y. ; Kusuki, H. ; Yanai, H.
Author_Institution :
Shibaura Institute of Technology
Keywords :
Buffer layers; Charge carrier processes; Chromium; Electron devices; Electron traps; Gallium arsenide; MESFETs; Neodymium; Poisson equations; Voltage;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
DOI :
10.1109/NUPAD.1990.748267
