2 GHz RF MEMS based microwave phase shifter with high resolution tuning

This paper elaborates circuit design, analytical study, modeling and simulation of RF (Radio Frequency) MEMS based phase shifter configurations. This work focuses attention on employing MEMS technology to build-up digitally controlled phase shifter based on the loaded line technique. This work objectively modifies the phase shifting system in such a manner that 2o, 4o, 8o, and 16o and their summations up to 24o phase shifts are achieved with high resolution tuning. The resolution of this modified system will be digitally controlled and will, consequently, be immune from noise interference. This developed version provides a resolution of 2o phase difference with tuning range extending up to 24o. The introduced modified low loss system is referred to RF MEMS capacitive switches. A simulation result indicates a maximum IL (Insertion Loss) of 1.4 dB, minimum IL of 0.9 dB and a RL (Return Loss) from 16.86 to 31.27 dB at operating frequency of 2 GHz.