• DocumentCode
    2597177
  • Title

    Numerical Simulation Of Two-dimensional Electron Transport In AlGaAs/InGaAs/GaAs Pseudomorphic Hemt´s

  • Author

    Wang, Tahui ; Hsieh, Cheng-Hsiang

  • Author_Institution
    National Chiao-Tung University
  • fYear
    1990
  • fDate
    3-4 Jun 1990
  • Firstpage
    49
  • Lastpage
    50
  • Keywords
    Density functional theory; Electron devices; Gallium arsenide; HEMTs; Indium gallium arsenide; Numerical simulation; PHEMTs; Poisson equations; Schrodinger equation; Steady-state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
  • Type

    conf

  • DOI
    10.1109/NUPAD.1990.748271
  • Filename
    748271
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597177