Title :
Saturn - A Device Engineer´s Tool For Optimizing Mosfet Performance And Lifetime
Author :
Jacobs, H. ; Hinsch, W. ; Hofmann, F. ; Jacobs, W. ; Paffrath, M. ; Rank, E. ; Steger, K. ; Weinert, U.
Author_Institution :
Silicon Process Technology
Keywords :
Circuit simulation; Design optimization; Doping profiles; Jacobian matrices; Leakage current; MOSFET circuits; Research and development; Saturn; Silicon; Stability;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
DOI :
10.1109/NUPAD.1990.748274