Electrical properties of Si-based junctions by SAB

Electrical properties of surface-activated-bonding (SAB) based Si/Si and Si/GaN junctions were investigated. Current-voltage (I-V) characteristics of n-Si/n-Si and n-Si/n-GaN junctions revealed ohmic features at room temperature. The p-Si/n-Si junctions showed asymmetric I-V characteristics, whose features were consistent with the scheme of the trap-assisted tunneling for the carrier transport across the interfaces. The I-V characteristics of respective Si/Si dice were close to one another and those of Si/GaN junctions were stable after measurements in varied temperatures. These results suggest that SAB is compatible with the standard semiconductor device process and potentially applicable to fabricating novel devices.