A high-efficiency 100-W four-stage doherty GaN HEMT power amplifier module for WCDMA systems

Summary form only given, as follows. In this paper, a novel high-efficiency four-stage Doherty power amplifier architecture for base station applications has been proposed and fabricated. Each power amplifier is based on a 25-W Cree GaN HEMT device with the transmission-line load network corresponding to an inverse class F mode approximation. In a single-carrier WCDMA operation mode with PAR of 6.5 dB, a high drain efficiency of 61% was achieved at an average output power of 43 dBm, with ACLR1 measured at -31 dBc level.