• DocumentCode
    2597295
  • Title

    Modeling Of Minority Carrier Mobility And Dopant-dependent Bandgap Narrowing For Accurate Device Simulation

  • Author

    Shigyo, N. ; Tanimoto, H. ; Norishima, M. ; Yasuda, S.

  • Author_Institution
    Toshiba Corporation
  • fYear
    1990
  • fDate
    3-4 Jun 1990
  • Firstpage
    63
  • Lastpage
    64
  • Keywords
    Bipolar transistors; Current measurement; Current-voltage characteristics; Impurities; Photonic band gap; Radiative recombination; Semiconductor process modeling; Silicon; Tail; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
  • Type

    conf

  • DOI
    10.1109/NUPAD.1990.748278
  • Filename
    748278
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597295