Title :
Modeling Of Minority Carrier Mobility And Dopant-dependent Bandgap Narrowing For Accurate Device Simulation
Author :
Shigyo, N. ; Tanimoto, H. ; Norishima, M. ; Yasuda, S.
Author_Institution :
Toshiba Corporation
Keywords :
Bipolar transistors; Current measurement; Current-voltage characteristics; Impurities; Photonic band gap; Radiative recombination; Semiconductor process modeling; Silicon; Tail; Ultra large scale integration;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
DOI :
10.1109/NUPAD.1990.748278
