Title :
Low temperature direct bonding assisted by CMP and plasma activation
Author :
Moriceau, H. ; Rieutord, F. ; Fournel, F. ; Imbert, B. ; DiCioccio, L. ; Baudin, F. ; Rauer, C. ; Morales, C.
Author_Institution :
CEA, Leti, Grenoble, France
Abstract :
Direct bonding appear well suited for low temperature bonding provided that tuned chemical mechanical polishing (CMP) or plasma activation processes can be used on surfaces before wafer contacting. Results on Si, SiO2 and metal bonding have been used to show on how such surface preparation processes allow obtaining strong and high quality bonding.
Keywords :
chemical mechanical polishing; wafer bonding; CMP; SiO2; chemical mechanical polishing; low temperature bonding; low temperature direct bonding; metal bonding; plasma activation processes; surface preparation; wafer contacting; Bonding; Chemicals; Plasma temperature; Surface cleaning; Surface morphology;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
DOI :
10.1109/LTB-3D.2012.6238068
