DocumentCode
2597372
Title
Low temperature plasma activated direct wafer bonding
Author
Plach, T. ; Hingerl, K. ; Dragoi, V. ; Wimplinger, M.
Author_Institution
Center for Surface & Nanoanalytics, Johannes Kepler Univ., Linz, Austria
fYear
2012
fDate
22-23 May 2012
Firstpage
145
Lastpage
145
Abstract
The bonding behavior of a low temperature direct wafer bonding process was studied for Si wafers with native oxide and Si wafers with thermal oxide. It was found that high bond strength could be achieved without annealing already at RT. Silicon bulk strength could be reached with annealing at 200°C.
Keywords
annealing; cryogenic electronics; elemental semiconductors; plasma materials processing; silicon; wafer bonding; Si; annealing; bonding behavior; high bond strength; low temperature plasma activated direct wafer bonding; native oxide; silicon bulk strength; temperature 200 C; thermal oxide; Annealing; Bonding; Plasma temperature; Silicon; Surface treatment; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4673-0743-7
Type
conf
DOI
10.1109/LTB-3D.2012.6238072
Filename
6238072
Link To Document