Title :
Low temperature plasma activated direct wafer bonding
Author :
Plach, T. ; Hingerl, K. ; Dragoi, V. ; Wimplinger, M.
Author_Institution :
Center for Surface & Nanoanalytics, Johannes Kepler Univ., Linz, Austria
Abstract :
The bonding behavior of a low temperature direct wafer bonding process was studied for Si wafers with native oxide and Si wafers with thermal oxide. It was found that high bond strength could be achieved without annealing already at RT. Silicon bulk strength could be reached with annealing at 200°C.
Keywords :
annealing; cryogenic electronics; elemental semiconductors; plasma materials processing; silicon; wafer bonding; Si; annealing; bonding behavior; high bond strength; low temperature plasma activated direct wafer bonding; native oxide; silicon bulk strength; temperature 200 C; thermal oxide; Annealing; Bonding; Plasma temperature; Silicon; Surface treatment; Wafer bonding;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
DOI :
10.1109/LTB-3D.2012.6238072
