Title :
Mosfet Submicron Model For Temperature Effect Characterization
Author :
Masuda, Hiroo ; Ikematsu, Ryuichi ; Mano, Junichi ; Sugihara, Hitoshi
Author_Institution :
Hitachi, Ltd.
Keywords :
Degradation; Equations; MOS devices; MOSFET circuits; Microcomputers; Solid modeling; Temperature dependence; Temperature distribution; Very large scale integration; Voltage;
Conference_Titel :
Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on
DOI :
10.1109/NUPAD.1990.748282
