DocumentCode :
2597479
Title :
Water vapor containing plasma activation for room-temperature bonding
Author :
Wang, Chenxi ; Umeda, Jun ; Xu, Yan ; Mawatari, Kazuma ; Kitamori, Takehiko ; Suga, Tadatomo
Author_Institution :
Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
fYear :
2012
fDate :
22-23 May 2012
Firstpage :
157
Lastpage :
157
Abstract :
A water vapor containing plasma activated bonding process is developed to optimize the bonding quality of Si/Si and glass/glass bondings in air ambient. Sufficient bonding strength was achieved at room temperature with no heating process. Meanwhile, good bonding efficiency was realized owing to the appropriate water molecules adsorbed on the surfaces. The whole processes are performed in low-vacuum and ambient air environment. The water vapor containing plasma activated bonding is thus low-cost and environmentally friendly process.
Keywords :
bonding processes; elemental semiconductors; silicon; water; Si-Si; glass/glass bondings; heating process; room-temperature bonding; temperature 293 K to 298 K; water molecules; water vapor containing plasma activation; Bonding; Educational institutions; Glass; Plasma temperature; Silicon; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
Type :
conf
DOI :
10.1109/LTB-3D.2012.6238078
Filename :
6238078
Link To Document :
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