• DocumentCode
    2597479
  • Title

    Water vapor containing plasma activation for room-temperature bonding

  • Author

    Wang, Chenxi ; Umeda, Jun ; Xu, Yan ; Mawatari, Kazuma ; Kitamori, Takehiko ; Suga, Tadatomo

  • Author_Institution
    Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2012
  • fDate
    22-23 May 2012
  • Firstpage
    157
  • Lastpage
    157
  • Abstract
    A water vapor containing plasma activated bonding process is developed to optimize the bonding quality of Si/Si and glass/glass bondings in air ambient. Sufficient bonding strength was achieved at room temperature with no heating process. Meanwhile, good bonding efficiency was realized owing to the appropriate water molecules adsorbed on the surfaces. The whole processes are performed in low-vacuum and ambient air environment. The water vapor containing plasma activated bonding is thus low-cost and environmentally friendly process.
  • Keywords
    bonding processes; elemental semiconductors; silicon; water; Si-Si; glass/glass bondings; heating process; room-temperature bonding; temperature 293 K to 298 K; water molecules; water vapor containing plasma activation; Bonding; Educational institutions; Glass; Plasma temperature; Silicon; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4673-0743-7
  • Type

    conf

  • DOI
    10.1109/LTB-3D.2012.6238078
  • Filename
    6238078