Title :
Surface activated bonding and transfer of Carbon Nanotube bumps to Au substrates
Author :
Fujino, Masahisa ; Terasaka, Hidenori ; Suga, Tadatomo ; Soga, Ikuo ; Konde, D. ; Ishizuki, Yoshikatsu ; Iwai, Taisuke
Author_Institution :
Sch. of Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
In this research, bump-shaped Vertically Aligned Mutli-walled Carbon Nanotubes (CNTs) were bonded to Au substrate as multilayer interconnect. In order to lower interconnect resistance between the CNT bumps and the Au substrate, the CNT bumps were covered with Au layer by Ar magnetron sputter, subsequently the CNT bumps and the Au substrates were bonded by surface activated bonding using Ar plasma. As a result, the resistance of CNT bumps including interconnect resistance between them was achieved ~10-3 Ω, that was equivalent value with conventional solder alloy.
Keywords :
argon; bonding processes; carbon nanotubes; gold; integrated circuit interconnections; multilayers; plasma deposition; Ar; Au substrates; C:Au; bump shaped vertically aligned mutliwalled carbon nanotubes; carbon nanotube bumps; interconnect resistance; multilayer interconnect; plasma magnetron sputtering; surface activated bonding; Bonding; Carbon nanotubes; Gold; Integrated circuit interconnections; Substrates; Surface resistance;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
DOI :
10.1109/LTB-3D.2012.6238079