• DocumentCode
    2597550
  • Title

    Low temperature Au-Au flip chip bonding with VUV/O3 treatment for 3D integration

  • Author

    Okada, Akiko ; Nimura, Masatsugu ; Unami, Naoko ; Shigetou, Akitsu ; Noma, Hirokazu ; Sakuma, Katsuyuki ; Shoji, Shuichi ; Mizuno, Jun

  • Author_Institution
    Waseda Univ., Tokyo, Japan
  • fYear
    2012
  • fDate
    22-23 May 2012
  • Firstpage
    171
  • Lastpage
    171
  • Abstract
    This paper describes low temperature Au-Au bonding with vacuum ultraviolet (VUV) irradiation in the presence of oxygen gas. The VUV/O3 treatment can remove organic contaminants without damages. The Au-Au bonding with VUV/O3 treatment was achieved at 200°C. The average shear strength was about 80 MPa per unit area. Therefore, it was proved that VUV/O3 treatment is effective in Au-Au bonding.
  • Keywords
    bonding processes; flip-chip devices; gold; integrated circuit manufacture; oxygen; surface treatment; three-dimensional integrated circuits; 3D integration; Au-Au; O3; low temperature bonding; low temperature flip chip bonding; organic contaminants; pressure 80 MPa; temperature 200 C; vacuum ultraviolet irradiation; Acoustics; Bonding; Gold; Plasma temperature; Radiation effects; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4673-0743-7
  • Type

    conf

  • DOI
    10.1109/LTB-3D.2012.6238082
  • Filename
    6238082
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597550