DocumentCode :
2597555
Title :
Low-temperature wafer bonding using sub-micron gold particles for wafer-level MEMS packaging
Author :
Ishida, H. ; Ogashiwa, T. ; Kanehira, Y. ; Ito, S. ; Yazaki, T. ; Mizuno, J.
Author_Institution :
SUSS MicroTec KK, Yokohama, Japan
fYear :
2012
fDate :
22-23 May 2012
Firstpage :
173
Lastpage :
173
Abstract :
Low-temperature wafer bonding using sub-μm gold particles together with wafer-level pattern transfer method has been developed. Sub-μm Au particle patterns were successfully transferred at 150°C and wafer bonding was performed at 200°C. Surface compliant performance was demonstrated by compression deformation measurement.
Keywords :
deformation; electronics packaging; low-temperature techniques; micromechanical devices; semiconductor device packaging; wafer bonding; Au; compression deformation measurement; low-temperature wafer bonding; sub-μm Au particle patterns; submicron gold particles; surface compliant performance; temperature 150 degC; temperature 200 degC; wafer bonding; wafer-level MEMS packaging; wafer-level pattern transfer method; Gold; Micromechanical devices; Packaging; Surface topography; Surface treatment; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
Type :
conf
DOI :
10.1109/LTB-3D.2012.6238083
Filename :
6238083
Link To Document :
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