• DocumentCode
    2597572
  • Title

    W-band GaN power amplifier MMICs

  • Author

    Brown, Andrew ; Brown, Kenneth ; Chen, Jiann-Jong ; Hwang, K.C. ; Kolias, N. ; Scott, Ryan

  • Author_Institution
    Raytheon, Rancho Cucamonga, United States
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. An advanced GaN semiconductor process has made possible the design and fabrication of W-band power amplifier MMICs with unprecedented performance. Power amplifier MMICs have been designed and fabricated that demonstrate output powers of 1.7 watts, power added efficiencies greater than 20%, and small signal gains of 21 dB. In addition, the compactness of these MMIC designs have allowed for MMIC power densities (MMIC output power relative to MMIC area) exceeding 1/2 watt per square mm.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973491
  • Filename
    5973491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597572