DocumentCode :
2597644
Title :
Investigation of Si/SiO2 bonding energy using recess test structure
Author :
Varpula, Aapo ; Dekker, James R. ; Suni, Tommi
Author_Institution :
Microsyst. & Nanoelectron, VTT (Tech. Res. Centre of Finland), Espoo, Finland
fYear :
2012
fDate :
22-23 May 2012
Firstpage :
193
Lastpage :
193
Abstract :
Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements.
Keywords :
acoustic microscopes; silicon compounds; wafer bonding; Si-SiO2; bonding energy; crack opening measurements; plasma activated uncoated silicon wafers; recess test structure; scanning acoustic microscope; Acoustics; Annealing; Bonding; Plasma measurements; Plasmas; Silicon; Surface cracks;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
Type :
conf
DOI :
10.1109/LTB-3D.2012.6238089
Filename :
6238089
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2597644
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