DocumentCode
2597764
Title
Evolution of temporary wafer (de)bonding technology towards low temperature processes for enhanced 3D integration
Author
Phommahaxay, A. ; Jourdain, A. ; Bex, P. ; Van den Eede, A. ; Swinnen, B. ; Beyer, G. ; Miller, A. ; Beyne, E.
Author_Institution
Imec, Leuven, Belgium
fYear
2012
fDate
22-23 May 2012
Firstpage
229
Lastpage
233
Abstract
Among the technological developments pushed by the emergence of 3D Stacked IC technologies, wafer thinning has become a key element in device processing over the past years. One major criteria, being Total Thickness Variation after thinning, various aspects in the temporary bonding step will be discussed with this respect. While these elements are now becoming mature enough for high-volume manufacturing, thin wafer debonding and handling still remain challenging and are still prone for evolution.
Keywords
bonding processes; stacking; three-dimensional integrated circuits; 3D integration; 3D stacked IC technologies; device processing; high-volume manufacturing; low temperature processes; temporary wafer debonding technology; thin wafer debonding; thin wafer handling; total thickness variation; wafer thinning; Bonding; Coatings; Silicon; Substrates; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4673-0743-7
Type
conf
DOI
10.1109/LTB-3D.2012.6238094
Filename
6238094
Link To Document