• DocumentCode
    2597794
  • Title

    High speed measurement of FET Vth at low Id

  • Author

    Norimatsu, Hideyuki

  • Author_Institution
    Yokogawa Hewlett-Packard, Tokyo, Japan
  • fYear
    1989
  • fDate
    13-14 March 1989
  • Firstpage
    31
  • Lastpage
    34
  • Abstract
    High-speed measurement of field-effect transistor (FET) threshold voltage at low drain current has been achieved by using an analog feedback method with proper guarding techniques. The method can be applied to process control test structure FETs and/or to characterize FETs which may be formed in high-density metal-oxide semiconductor large-scale integration circuits. Ease of operation has been augmented by dedicated software. With correct application of the guard technique, it is proved that Vth at low Id such as 1 nA can be measured in a reasonable measurement time.
  • Keywords
    MOS integrated circuits; insulated gate field effect transistors; large scale integration; process control; semiconductor device testing; voltage measurement; 1 nA; FET; MOSFET; analog feedback method; dedicated software; field-effect transistor; guarding techniques; high speed technique; high-density metal-oxide semiconductor large-scale integration circuits; low drain current; process control test structure FETs; threshold voltage; voltage measurement; Circuit testing; Current measurement; FETs; Feedback; Integrated circuit measurements; Process control; Semiconductor device testing; Threshold voltage; Time measurement; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
  • Print_ISBN
    0-87942-714-0
  • Type

    conf

  • DOI
    10.1109/ICMTS.1989.39276
  • Filename
    39276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597794