Title :
Low temperature wafer bonding for MEMS processes and 3D integration
Author_Institution :
Process Dev. MEMS, X-FAB Semicond. Foundries AG, Erfurt, Germany
Abstract :
In this paper different wafer bonding processes for completely processed MEMS and CMOS wafers will be introduced and discussed. Low temperature direct bonding, anodic bonding, glass frit bonding and metal compressive bonding can fulfill the requirements for a bonding technique operating at low temperatures and with high quality.
Keywords :
CMOS integrated circuits; bonding processes; micromechanical devices; 3D integration; CMOS wafers; MEMS processes; anodic bonding; direct bonding; glass frit bonding; low temperature wafer bonding; metal compressive bonding; Bonding; CMOS integrated circuits; Glass; Metals; Plasma temperature; Surface treatment; Wafer bonding; anodic bonding; glass frit; low temperature; metal-metal bonding; micro electro mechanical systems (MEMS); plasma assisted direct bonding; wafer bonding;
Conference_Titel :
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4673-0743-7
DOI :
10.1109/LTB-3D.2012.6238097
