DocumentCode
2597846
Title
Test masks for micromachining silicon
Author
Puers, B. ; Sansen, Willy
Author_Institution
Dept. of Electron., Catholic Univ. of Leuven, Heverlee, Belgium
fYear
1989
fDate
13-14 March 1989
Firstpage
51
Lastpage
53
Abstract
Test masks were elaborated to gain control in the use of anisotropic etchants for micromachining silicon. The masks incorporate structures other than wafer flats with different orientations. The aim is to determine the behavior of the etchants in terms of crystal orientation. A second set of test masks resulting in a novel compensation technique for preventing convex corner undercutting is presented.
Keywords
elemental semiconductors; etching; machining; masks; semiconductor technology; silicon; Si micromachining; anisotropic etchants; compensation technique; convex corner undercutting; crystal orientation; test masks; Chemicals; Conductivity; Etching; Fabrication; Gain control; Goniometers; Mechanical sensors; Micromachining; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
Print_ISBN
0-87942-714-0
Type
conf
DOI
10.1109/ICMTS.1989.39280
Filename
39280
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