• DocumentCode
    2597879
  • Title

    Derivation of Delbruck´s Model for Random Failure (For Semiconductor Materials): Its Identification with the Arrhenius Model; and Its Experimental Verification

  • Author

    Pershing, A.V. ; Hollingsworth, G.E.

  • Author_Institution
    Lockheed Missiles and Space Company, Sunnyvale, California
  • fYear
    1963
  • fDate
    Sept. 1963
  • Firstpage
    61
  • Lastpage
    67
  • Keywords
    Crystallization; Energy measurement; Entropy; Kelvin; Mathematical model; Missiles; Physics; Semiconductor materials; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Failure in Electronics, 1963. Second Annual Symposium on the
  • Conference_Location
    Chicago, IL, USA
  • ISSN
    0097-2088
  • Type

    conf

  • DOI
    10.1109/IRPS.1963.362237
  • Filename
    4207588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597879