Title :
Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and no FP technology
Author :
Komiak, J.J. ; Chu, K.-Y. ; Chao, P.C.
Author_Institution :
BAE Systems, Nashua, United States
Abstract :
Summary form only given, as follows. Design and performance of power amplifiers that have established new benchmarks for 2 to 20 GHz power are reported. The Dual Field Plate amplifier achieved P3dB of 26.3 Watts max., 15.4 Watts average, with 38.3% max 19.8% average PAE. Using an improved device, the No FP amplifier achieved P3dB of 21.6 Watts max., 16.0 Watts average, with 35.7% max 25.9% average PAE. This output power, bandwidth, and efficiency is superior to the best previously reported results for GaN HEMT power amplifiers.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973509
