A fast measurement technique for the determination of small signal parameters of the bipolar transistor

Author

Vandeloo, Paul

Author_Institution

IMEC, Leuven, Belgium

fYear

1989

fDate

13-14 March 1989

Firstpage

85

Lastpage

90

Abstract

The author deals with the measurement of small-signal parameters for modern bipolar transistors. The proposed method uses the measurement of S parameters, mathematical conversion of these S parameters to H parameters, and the circle-fit method. Since modern transistors are to be measured at low DC currents, common base measurements are preferred over common emitter measurements. How the circle-fit method can be used to extract the small-signal parameters is indicated.

Keywords

S-parameters; bipolar transistors; capacitance measurement; electric resistance measurement; frequency measurement; gain measurement; semiconductor device testing; H-parameters; S-parameters; bipolar transistor; circle-fit method; common base measurements; fast measurement technique; low DC currents; mathematical conversion; small signal parameters; Bipolar transistors; Capacitance; Current measurement; Electrical resistance measurement; Frequency; Measurement techniques; Noise measurement; Scattering parameters; Time measurement; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on

Print_ISBN

0-87942-714-0

Type

conf

DOI

10.1109/ICMTS.1989.39287

Filename

39287