Nanoindentation study of the sputtered Cu thin films for interconnect applications

Author

Srinivasarao, V. ; Jayaganthan, R. ; Sekhar, V.N. ; Mohankumar, K. ; Tay, A.A.O. ; Kripesh, V.

Author_Institution

Dept. of Mech. Eng., National Univ. of Singapore, Singapore

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

343

Lastpage

347

Abstract

Copper films of different thicknesses of 0.1, 0.5, and 1 μm were deposited by DC magnetron sputtering on the adhesion promoting Ta layer deposited on the silicon (100) wafer. The films were annealed in vacuum at temperature 200° C and their elastic modulus and hardness were measured by nanoindentation technique. The influence of thickness and annealing temperature on the mechanical behavior of copper thin films is explored in the present work.

Keywords

annealing; copper; elastic moduli; hardness; indentation; integrated circuit interconnections; materials testing; nanotechnology; semiconductor thin films; silicon; sputter deposition; tantalum; 0.1 micron; 0.5 micron; 1 micron; 200 C; Cu-Ta-Si; DC magnetron sputtering; Ta layer; adhesion; annealing temperature; copper thin films; elastic modulus; hardness; interconnect applications; mechanical behavior; nanoindentation; silicon wafer; Copper; Integrated circuit interconnections; Mechanical factors; Plastic films; Sputtering; Substrates; Temperature; Thin film circuits; Thin film devices; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference, 2004. EPTC 2004. Proceedings of 6th

Print_ISBN

0-7803-8821-6

Type

conf

DOI

10.1109/EPTC.2004.1396631

Filename

1396631