Title :
Nanoindentation study of the sputtered Cu thin films for interconnect applications
Author :
Srinivasarao, V. ; Jayaganthan, R. ; Sekhar, V.N. ; Mohankumar, K. ; Tay, A.A.O. ; Kripesh, V.
Author_Institution :
Dept. of Mech. Eng., National Univ. of Singapore, Singapore
Abstract :
Copper films of different thicknesses of 0.1, 0.5, and 1 μm were deposited by DC magnetron sputtering on the adhesion promoting Ta layer deposited on the silicon (100) wafer. The films were annealed in vacuum at temperature 200° C and their elastic modulus and hardness were measured by nanoindentation technique. The influence of thickness and annealing temperature on the mechanical behavior of copper thin films is explored in the present work.
Keywords :
annealing; copper; elastic moduli; hardness; indentation; integrated circuit interconnections; materials testing; nanotechnology; semiconductor thin films; silicon; sputter deposition; tantalum; 0.1 micron; 0.5 micron; 1 micron; 200 C; Cu-Ta-Si; DC magnetron sputtering; Ta layer; adhesion; annealing temperature; copper thin films; elastic modulus; hardness; interconnect applications; mechanical behavior; nanoindentation; silicon wafer; Copper; Integrated circuit interconnections; Mechanical factors; Plastic films; Sputtering; Substrates; Temperature; Thin film circuits; Thin film devices; Transistors;
Conference_Titel :
Electronics Packaging Technology Conference, 2004. EPTC 2004. Proceedings of 6th
Print_ISBN :
0-7803-8821-6
DOI :
10.1109/EPTC.2004.1396631
