Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications

Summary form only given, as follows. A method for using a distributed modeling approach to describe the extrinsic and intrinsic parts of a dual-gate structure separated from each other is demonstrated. A small-signal model based on this approach was developed. A scalable nonlinear model was obtained through enhancing the small-signal model by an intrinsic large-signal state-space kernel. The excellent capabilities of both the linear and nonlinear models are demonstrated on fabricated dual-gate HEMTs and a 2.5 W power amplifier MMIC.