DocumentCode
2598029
Title
Evaluation technique of gate oxide reliability with electrical and optical measurements
Author
Uraoka, Y. ; Tsutsu, N. ; Morii, T. ; Nakata, Y. ; Esaki, H.
Author_Institution
Matsushita Electr. Ind. Co., Ltd., Osaka, Japan
fYear
1989
fDate
13-14 March 1989
Firstpage
97
Lastpage
102
Abstract
Techniques combining optical and electrical measurements have been developed for the evaluation of gate oxide reliability. The authors have found that uniformity of the injection current across an electrode is degraded beyond a certain current density which coincides with the onset of QBD lowering under high current density. The authors describe the system architecture and measuring theory and give an application example to show the effectiveness of the method. They also describe the general characteristics of oxide found by using this method.
Keywords
current distribution; electric breakdown of solids; oxidation; reliability; semiconductor technology; breakdown; current density; electrical measurements; gate oxide reliability; injection current uniformity; optical measurement; system architecture; Current density; Current distribution; Current measurement; Degradation; Design for quality; Dielectric measurements; Electric breakdown; Electric variables measurement; Electron optics; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
Print_ISBN
0-87942-714-0
Type
conf
DOI
10.1109/ICMTS.1989.39289
Filename
39289
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