• DocumentCode
    2598029
  • Title

    Evaluation technique of gate oxide reliability with electrical and optical measurements

  • Author

    Uraoka, Y. ; Tsutsu, N. ; Morii, T. ; Nakata, Y. ; Esaki, H.

  • Author_Institution
    Matsushita Electr. Ind. Co., Ltd., Osaka, Japan
  • fYear
    1989
  • fDate
    13-14 March 1989
  • Firstpage
    97
  • Lastpage
    102
  • Abstract
    Techniques combining optical and electrical measurements have been developed for the evaluation of gate oxide reliability. The authors have found that uniformity of the injection current across an electrode is degraded beyond a certain current density which coincides with the onset of QBD lowering under high current density. The authors describe the system architecture and measuring theory and give an application example to show the effectiveness of the method. They also describe the general characteristics of oxide found by using this method.
  • Keywords
    current distribution; electric breakdown of solids; oxidation; reliability; semiconductor technology; breakdown; current density; electrical measurements; gate oxide reliability; injection current uniformity; optical measurement; system architecture; Current density; Current distribution; Current measurement; Degradation; Design for quality; Dielectric measurements; Electric breakdown; Electric variables measurement; Electron optics; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
  • Print_ISBN
    0-87942-714-0
  • Type

    conf

  • DOI
    10.1109/ICMTS.1989.39289
  • Filename
    39289