DocumentCode :
2598029
Title :
Evaluation technique of gate oxide reliability with electrical and optical measurements
Author :
Uraoka, Y. ; Tsutsu, N. ; Morii, T. ; Nakata, Y. ; Esaki, H.
Author_Institution :
Matsushita Electr. Ind. Co., Ltd., Osaka, Japan
fYear :
1989
fDate :
13-14 March 1989
Firstpage :
97
Lastpage :
102
Abstract :
Techniques combining optical and electrical measurements have been developed for the evaluation of gate oxide reliability. The authors have found that uniformity of the injection current across an electrode is degraded beyond a certain current density which coincides with the onset of QBD lowering under high current density. The authors describe the system architecture and measuring theory and give an application example to show the effectiveness of the method. They also describe the general characteristics of oxide found by using this method.
Keywords :
current distribution; electric breakdown of solids; oxidation; reliability; semiconductor technology; breakdown; current density; electrical measurements; gate oxide reliability; injection current uniformity; optical measurement; system architecture; Current density; Current distribution; Current measurement; Degradation; Design for quality; Dielectric measurements; Electric breakdown; Electric variables measurement; Electron optics; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
Print_ISBN :
0-87942-714-0
Type :
conf
DOI :
10.1109/ICMTS.1989.39289
Filename :
39289
Link To Document :
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