Silicon Transistor Failure Mechanisms Caused by Surface Charge Separations

Author

Metz, E.David

Author_Institution

Motorola, Inc., Semiconductor Products Div., Phoenix, Arizona

fYear

1963

fDate

Sept. 1963

Firstpage

163

Lastpage

172

Keywords

Failure analysis; Leakage current; Life testing; Noise level; Optical wavelength conversion; P-n junctions; Silicon; Stability; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Failure in Electronics, 1963. Second Annual Symposium on the

Conference_Location

Chicago, IL, USA

ISSN

0097-2088

Type

DOI

10.1109/IRPS.1963.362244

Filename

4207595

Link To Document