III–V FET high frequency model with drift and depletion charges

Summary form only given, as follows. A formulation of the III–V FET nonlinear charge model decomposed into a combination of univariate voltage depletion charges and a bivariate mixed voltage-current dependent “drift” charge is presented. Analogous to the diffusion charge in BJT models, the drift charge represents the mobile carriers in the channel of the FET. The total charge depends on the depletion capacitances, drain current, and transit time, which links the FET charge model directly to the physical operation of the device.