• DocumentCode
    2598066
  • Title

    Large-signal scattering parameter measurements for RF power transistors

  • Author

    Call, John B. ; Davis, William A.

  • Author_Institution
    Wireless Infrastruct. Syst. Div., Metorola Inc., USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    143
  • Lastpage
    146
  • Abstract
    Large-signal nonlinear two-port device measurements are described using a calibrated, vector-measurement system. The unique measurement system architecture allows meaningful measurement of high-power RF transistors biased in nonlinear modes of operation such as class B. Measurement results are discussed along with their relevance to the RF power amplifier design process
  • Keywords
    S-parameters; UHF measurement; UHF transistors; power transistors; semiconductor device measurement; RF power amplifier design; RF power transistors; RTL measurement system; calibrated vector-measurement system; class B operation; high-power transistors; large-signal S-parameter measurements; nonlinear operation modes; nonlinear two-port device measurements; scattering parameter measurements; Calibration; Error correction; Fixtures; Power amplifiers; Power measurement; Power system modeling; Power transistors; Radio frequency; Radiofrequency amplifiers; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio and Wireless Conference, 2000. RAWCON 2000. 2000 IEEE
  • Conference_Location
    Denver, CO
  • Print_ISBN
    0-7803-6267-5
  • Type

    conf

  • DOI
    10.1109/RAWCON.2000.881875
  • Filename
    881875
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2598066