Title :
High power effects in gallium nitride-based microwave and RF control devices
Author :
Caverly, Robert H. ; Drozdovski, Nikolai ; Quinn, Michael
Author_Institution :
Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA
Abstract :
Gallium nitride-based HEMTs have been studied in a microwave and RF control application under high power levels. A theoretical model is presented showing an increase in the microwave resistance occurs at power levels greater than +20 dBm due to operation near the current saturation region. This phenomenon is primarily due to the field-dependent mobility in the two dimensional electron gas and is verified with on-wafer experimental data
Keywords :
III-V semiconductors; carrier mobility; gallium compounds; microwave field effect transistors; power HEMT; semiconductor device models; two-dimensional electron gas; GaN; HEMTs; III-V semiconductors; RF control devices; current saturation region; field-dependent mobility; high power effects; microwave control devices; microwave resistance; on-wafer experimental data; theoretical model; two dimensional electron gas; Gallium compounds; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; Microwave circuits; Microwave devices; Radio frequency; Switches; Voltage;
Conference_Titel :
Radio and Wireless Conference, 2000. RAWCON 2000. 2000 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-6267-5
DOI :
10.1109/RAWCON.2000.881877
